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TPD1008SA Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte TPD1008SA
Spiegazioni elettronici  High-side Power Switch for Motors, Solenoids, and Lamp Drivers
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPD1008SA
2006-10-31
1
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1008SA
High-side Power Switch for Motors, Solenoids, and Lamp Drivers
The TPD1008SA is a monolithic power IC for high-side switches. The IC
has a vertical MOS FET output which can be directly driven from a CMOS
or TTL logic circuit (e.g., an MPU). The device offers intelligent
self-protection and diagnostic functions.
Features
A monolithic power IC with a new structure combining a control block
(Bi–CMOS) and a vertical power MOS FET (π–MOS) on a single chip
One side of load can be grounded to a high-side switch.
Can directly drive a power load from a microprocessor.
Built–in protection against thermal shutdown and load short circuiting
Incorporates a diagnosis function that allows diagnosis output to be
read externally at load short-circuiting, opening, or overtemperature.
Up to −10V of counter-electromotive force from an L load can be
applied.
Low on-resistance
: RDS (ON) = 200mΩ (max)
Low operating current
: IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
5-pin TO−220 insulated package
Three standard lead configurations
Pin Assignment
Note:
Due to its MOS structure, this product is sensitive to static electricity.
Weight
SSIP5–P–1.70C : 2.1g (typ.)
ZIP5–P–1.70L
: 2.1g (typ.)
ZIP5–P–1.70K : 2.1g (typ.)


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