TPCS8004

2004-07-06

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

TPCS8004

High-Speed Switching Applications

Switching Regulator Applications

DC-DC Converter Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

200

V

200

V

Gate-source voltage

±20

V

DC

(Note 1)

1.3

Drain current

Pulse (Note 1)

5.2

A

Drain power dissipation (t = 10 s)

(Note 2a)

1.5

Drain power dissipation (t = 10 s)

(Note 2b)

0.6

W

Single pulse avalanche energy(Note3)

1.05

mJ

Avalanche current

1.3

A

Repetitive avalanche energy

(Note2a, Note 4)

0.15

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3R1B

Weight: 0.035 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4