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TPCP8202 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TPCP8202
Spiegazioni elettronici  TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)
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TPCP8202 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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TPCP8202
2007-01-16
2
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 5.5 A
Note 5: Repetitive rating: Pulse width limited by Max. Channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
Characteristic
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
84.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
101.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
215.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
347.2
°C/W
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
25.4
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)


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