TPCP8001-H datasheet(4/7 Pages) TOSHIBA

Il numero della parte	TPCP8001-H

Spiegazioni elettronici	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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4 / 7 page

TPCP8001-H

2006-05-29

4

1

10

100

VGS = 4.5 V

10

0.1

100

0.1

1

100

10

1

25°C

100°C

Ta

= −55°C

0

0.6

0.8

1

0

4

6

8

10

0.4

0.2

ID = 7.2 A

3.6

1.8

2

0

1

2

3

8

12

16

4

5

20

4

Ta

= −55°C

25°C

100°C

0

2.4

4

12

8

16

0.4

0

2

0.8

1.2

1.6

VGS = 2.8 V

3.3

3.4

3.1

3.5

10

4

3.2

3.0

5

2.9

0

2

6

4

8

0.4

0

2

0.8

1.2

1.6

VGS = 2.8 V

3.4

3.2

3.5

10

2.9

3.0

4

3.1

3.3

2.4

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS

Common source

Ta

= 25°C

Pulse test

Gate-source voltage VGS (V)

ID – VGS

Gate-source voltage VGS (V)

VDS – VGS

Drain current ID (A)

RDS (ON) – ID

Drain current ID (A)

⎪Yfs⎪ – ID

Common source

Ta

= 25°C

Pulse test

Common source

VDS = 10 V

Pulse test

Common source

Ta

= 25°C

Pulse test

Common source

VDS = 10 V

Pulse test

Common source

Ta

= 25°C

Pulse test

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TPCP8001-H Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor

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