TPCM8001-H datasheet(6/7 Pages) TOSHIBA

Il numero della parte	TPCM8001-H

Spiegazioni elettronici	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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TPCM8001-H

2006-11-16

6

rth − tw

Safe operating area

PD – Tc

Drain-source voltage VDS (V)

Pulse width tw (s)

Case temperature TC (°C)

0.1

100

1

10

100

VDSS max

10

1

DC operation

Tc = 25°C

t =1 ms *

ID max (Continuous)

ID max (Pulse) *

0

10

20

30

50

40

80

120

160

0.1

10 ms *

0.1

0.001

0.01

0.1

1

10

100

1000

10

100

1000

(3)

(1)

(2)

Single - pulse

1

(1) Device mounted on a glass-epoxy board (a) (Note 2a)

(2) Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Tc=25

°C

* Single - pulse

Ta = 25°C

Curves

must

be

derated

linearly

with

increase

in

temperature.

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