TPCF8303_07 datasheet(3/7 Pages) TOSHIBA

Il numero della parte	TPCF8303

Spiegazioni elettronici	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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3 / 7 page

TPCF8303

2006-11-16

3

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = −20 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 10 V

−10

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 μA

−0.45

⎯

−1.2

V

RDS (ON)

VGS = −1.8 V, ID = −1.5 A

⎯

120

250

RDS (ON)

VGS = −2.5 V, ID = −1.5 A

⎯

63

87

Drain-source ON resistance

RDS (ON)

VGS = −4.5 V, ID = −1.5 A

⎯

43

58

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −1.5 A

3.0

6.0

⎯

S

Input capacitance

Ciss

⎯

860

⎯

Reverse transfer capacitance

Crss

⎯

110

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

140

⎯

pF

Rise time

tr

⎯

5.6

⎯

Turn-on time

ton

⎯

16

⎯

Fall time

tf

⎯

16

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

55

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

11

⎯

Gate-source charge1

Qgs1

⎯

0.9

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −16 V, VGS = −5 V,

ID = −3 A

⎯

2.7

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

−12

A

Forward voltage (diode)

VDSF

IDR = −3.0 A, VGS = 0 V

⎯

1.2

V

VDD ∼− −10 V

−5 V

VGS

0 V

ID = −1.5 A

VOUT

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