TPCF8301_07 datasheet(6/7 Pages) TOSHIBA

Il numero della parte	TPCF8301

Spiegazioni elettronici	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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6 / 7 page

TPCF8301

2006-11-16

6

Pulse width tw (s)

rth – tw

Drain-source voltage VDS (V)

Safe operating area

1

1 m

10 m

100 m

1

10

100

1000

10

100

1000

Device mounted on a glass-epoxy board (a)

(1) Single-device operation

(2) Single-device value at dual operation

Device mounted on a glass-epoxy board (b)

(3) Single-device operation

(4) Single-device value at dual operation

(4)

(1)

(2)

(3)

−0.1

−1

−10

−100

−1

−10

−100

10 ms*

ID max (pulsed)*

VDSS max

1 ms*

*: Single nonrepetitive pulse

Ta

= 25°C

Curves must be derated

linearly with increase in

temperature

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