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IRF7379IPBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRF7379IPBF
Spiegazioni elettronici  HEXFET짰 Power MOSFET
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF7379IPBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRF7379IPbF
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 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Notes:
‚ N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
30
VGS = 0V, ID = 250µA
P-Ch -30
VGS = 0V, ID = -250µA
N-Ch
— 0.032
Reference to 25°C, ID = 1mA
P-Ch
— -0.037 —
Reference to 25°C, ID = -1mA
— 0.038 0.045
VGS = 10V, ID = 5.8A
ƒ
— 0.055 0.075
VGS = 4.5V, ID = 4.9A
ƒ
— 0.070 0.090
VGS = -10V, ID =- 4.3A
ƒ
— 0.130 0.180
VGS = -4.5V, ID =- 3.7A
ƒ
N-Ch 1.0
VDS = VGS, ID = 250µA
P-Ch -1.0
VDS = VGS, ID = -250µA
N-Ch 5.2
VDS = 15V, ID = 2.4A
ƒ
P-Ch 2.5
VDS = -24V, ID = -1.8A
ƒ
N-Ch
1.0
VDS = 24 V, VGS = 0V
P-Ch
-1.0
VDS = -24V, VGS = 0V
N-Ch
25
VDS = 24 V, VGS = 0V, TJ = 125°C
P-Ch
-25
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
N-P
––
±100
VGS = ± 20V
N-Ch
25
P-Ch
25
N-Ch
2.9
P-Ch
2.9
N-Ch
7.9
P-Ch
9.0
N-Ch
6.8
P-Ch
11
N-Ch
21
P-Ch
17
N-Ch
22
P-Ch
25
N-Ch
7.7
P-Ch
18
LD
Internal Drain Inductace
N-P
4.0
Between lead, 6mm (0.25in.) from
LS
Internal Source Inductance
N-P
6.0
package and center of die contact
N-Ch
520
P-Ch
440
N-Ch
180
P-Ch
200
N-Ch
72
P-Ch
93
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
3.1
P-Ch
-3.1
N-Ch
46
P-Ch
-34
N-Ch
1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
ƒ
P-Ch
-1.0
TJ = 25°C, IS = -1.8A, VGS = 0V
ƒ
N-Ch
47
71
P-Ch
53
80
N-Ch
56
84
P-Ch
66
99
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
V
S
µA
nC
ns
nH
pF
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
ƒ
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, ID = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
ƒ
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0Ω,
RD = 8.2Ω
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
ƒ
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
N-Ch
P-Ch
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)

VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
P-Channel
ƒ
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.


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