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74LVC1G66GM Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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74LVC1G66GM Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
6 / 22 page 74LVC1G66_6 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 06 — 27 August 2007 6 of 22 NXP Semiconductors 74LVC1G66 Bilateral switch 10.1 Test circuits 10.2 ON resistance VI = VCC or GND and VO = GND or VCC.VI = VCC or GND and VO = open circuit. Fig 7. Test circuit for measuring OFF-state leakage current Fig 8. Test circuit for measuring ON-state leakage current 001aag488 IS IS VI VIL VO VCC GND Z Y E 001aag489 IS VI VIH VO VCC GND Y Z E Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 10 to Figure 15. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max RON(peak) ON resistance (peak) VI = GND to VCC; see Figure 9 ISW = 4 mA; VCC = 1.65 V to 1.95 V - 34.0 130 - 195 Ω ISW = 8 mA; VCC = 2.3 V to 2.7 V - 12.0 30 - 45 Ω ISW = 12 mA; VCC = 2.7 V - 10.4 25 - 38 Ω ISW = 24 mA; VCC = 3.0 V to 3.6 V - 7.8 20 - 30 Ω ISW = 32 mA; VCC = 4.5 V to 5.5 V - 6.2 15 - 23 Ω RON(rail) ON resistance (rail) VI = GND; see Figure 9 ISW = 4 mA; VCC = 1.65 V to 1.95 V - 8.2 18 - 27 Ω ISW = 8 mA; VCC = 2.3 V to 2.7 V - 7.1 16 - 24 Ω ISW = 12 mA; VCC = 2.7 V - 6.9 14 - 21 Ω ISW = 24 mA; VCC = 3.0 V to 3.6 V - 6.5 12 - 18 Ω ISW = 32 mA; VCC = 4.5 V to 5.5 V - 5.8 10 - 15 Ω VI =VCC; see Figure 9 ISW = 4 mA; VCC = 1.65 V to 1.95 V - 10.4 30 - 45 Ω ISW = 8 mA; VCC = 2.3 V to 2.7 V - 7.6 20 - 30 Ω ISW = 12 mA; VCC = 2.7 V - 7.0 18 - 27 Ω ISW = 24 mA; VCC = 3.0 V to 3.6 V - 6.1 15 - 23 Ω ISW = 32 mA; VCC = 4.5 V to 5.5 V - 4.9 10 - 15 Ω |
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