2SD1899-Z datasheet(1/1 Pages) TEL

Il numero della parte	2SD1899-Z

Spiegazioni elettronici	Plastic-Encapsulated Transistors

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Produttore elettronici	TEL [TRANSYS Electronics Limited]

Homepage	http://www.transyselectronics.com

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TO-252 Plastic-Encapsulated Transistors

2SD1899-Z TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

2

W (Tamb=25

℃)

Collector current

ICM:

3

A

Collector-base voltage

V(BR)CBO:

60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specifie)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

100µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA, IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V, IE=0

10

µA

Emitter cut-off current

IEBO

VEB=7V, IC=0

10

µA

hFE(1)

VCE=2V, IC=200mA

60

hFE(2)

VCE=2V, IC=600mA

100

400

DC current gain

hFE(3)

VCE=2V, IC=2A

50

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A, IB=150mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=1.5A, IB=150mA

1.2

V

Transition frequency

fT

VCE=5V, IC=1.5A

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

30

pF

Turn on Time

ton

0.5

Storage Time

tstg

2.0

Switching Time

Fall Time

tf

VCC=30V, IC=1A, IB1=-IB2=-0.05A

0.5

µs

CLASSIFICATION OF

hFE(1)

Rank

M

L

K

Range

100-200

160-320

200-400

TO-252

1. BASE

2. COLLECTOR

3. EMITTER

1

2 3

Transys

Electronics

LI M ITE D

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