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SLCD-61N5 Scheda tecnica(PDF) 1 Page - Silonex Inc.

Il numero della parte SLCD-61N5
Spiegazioni elettronici  Solderable Planar Photodiode
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Produttore elettronici  SILONEX [Silonex Inc.]
Homepage  http://www.silonex.com/
Logo SILONEX - Silonex Inc.

SLCD-61N5 Scheda tecnica(HTML) 1 Page - Silonex Inc.

  SLCD-61N5 Datasheet HTML 1Page - Silonex Inc.  
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5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLCD-61N5
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and linear
short circuit current over a wide range of illumination.
These devices are widely used for light sensing and
power generation because of their stability and high
efficiency.
They are particularly suited to power
conversion applications due to their low internal
impedance, relatively high shunt impedance, and
stability.
These devices also provide a reliable and
inexpensive detector for instrumentation and light
beam sensing applications.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +125°C
Operating Temperature
-40
°C to +125°C
Cathode
Anode
Sensitive Area
(93.6 sq.mm.)
Dimensions in mm. (+/- 0.13)
0.4
10.2
10.2
Also available with leads as part number SLSD-71N5
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
2.5
4.0
mA
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current
3.3
µA
VR=5V, Ee=0
CJ
Junction Capacitance
2.0
nF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
µA
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice
104114 REV 0
Notes: (1) Ee = light source @ 2854
°K


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