IRF7476PBF datasheet(4/8 Pages) IRF

Il numero della parte	IRF7476PBF

Spiegazioni elettronici	HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0m廓@VGS = 4.5V , ID = 15A )

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Produttore elettronici	IRF [International Rectifier]

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Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

0.1

1

10

100

1000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

= 0 V

GS

T = 150

C

J

°

T = 25

C

J

°

0

5

10

15

20

25

30

0

1

2

3

4

5

6

Q , Total Gate Charge (nC)

G

I

=

D

12A

V

= 2.4V

DS

V

= 6V

DS

V

= 9.6V

DS

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs+ Cgd, CdsSHORTED

Crss = Cgd

Coss = Cds+ Cgd

Coss

Crss

Ciss

VSD, Source-to-Drain Voltage (V)

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

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