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SLD-68HFBG1 Scheda tecnica(PDF) 1 Page - Silonex Inc. |
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SLD-68HFBG1 Scheda tecnica(HTML) 1 Page - Silonex Inc. |
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1 / 1 page  5200 St. Patrick St., Montreal The Old Railway, Princes Street Que., H4E 4N9, Canada Ulverston, Cumbria, LA12 7NQ, UK Tel: 514-768-8000 Tel: 01 229 581 551 Fax: 514-768-8889 Fax: 01 229 581 554 QF-84 SLD-68HFBG1 Internal Infrared Rejection Filter Planar Photodiode Features • Fast switching time, Low capacitance • High responsivity • Linear response vs irradiance • IR Blocking Filter • Hermetic TO-46 case with flat window • Multiple dark current ranges available Description This small area planar, passivated silicon photodetector is designed to operate in either photovoltaic or reverse bias mode. It provides excellent linearity in output signal versus irradiance (Ee). Low dark current and low capacitance make it the ideal detector for fast rise time applications. Internal blue-green filter blocks infrared radiation. Absolute Maximum Ratings Storage Temperature -20 °C to +75°C Operating Temperature -20 °C to +75°C Soldering Temperature (1) 260 °C CATHODE (Common to case) Anode Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. 25.4 Min. 45° Dimensions in mm. (+/- 0.13) 4.7 0.5 2.5 5.1 0.8 ø 5.3 0.0 0.2 0.4 0.6 0.8 1.0 10° 20° 30° 40° 50° 60° 70° 80° 90° 100° 1.0 0.8 0.6 0.4 120° Half Angle = 35° Directional Sensitivity Characteristics 0 20° 40° 60° 80° 100° Electrical Characteristics (TA=25 °C unless otherwise noted) Symbol Parameter Min Typ Max Units Test Conditions ISC Short Circuit Current 6 10 µA VR=0V, Ee=25mW/cm 2 (2) VOC Open Circuit Voltage 0.30 V Ee=25mw/cm 2 (2) ID Reverse Dark Current: SLD-68HFBG1A 100 nA VR=100mV, Ee=0 SLD-68HFBG1B 100 nA VR=5V, Ee=0 SLD-68HFBG1C 10 nA VR=5V, Ee=0 SLD-68HFBG1D 1 nA VR=5V, Ee=0 SLD-68HFBG1E 250 pA VR=5V, Ee=0 CJ Junction Capacitance 40 pF VR=0, Ee=0, f=1MHz tR Rise Time 1.0 µs VR=10V, RL=1k Ω (3) tF Fall Time 1.5 µs VR=10V, RL=1k Ω (3) TCI Temp. Coef., ISC +0.2 %/ °C (1) VBR Reverse Breakdown Voltage 50 V IR=100 µA λ P Maximum Sensitivity Wavelength 550 nm λ R Sensitivity Spectral Range 400 700 nm θ 1/2 Acceptance Half Angle 35 deg (off center-line) Specifications subject to change without notice 102539 REV 2 Notes: (1) >2 mm from case for <5 sec. (2) Ee = light source @ 2854 °K (3) Ee = light source @ λ = 580 nm |
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