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TC6320TG Scheda tecnica(PDF) 1 Page - Supertex, Inc |
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TC6320TG Scheda tecnica(HTML) 1 Page - Supertex, Inc |
1 / 4 page TC6320 Features Low threshold Low on resistance Low input capacitance Fast switching speeds Freedom from secondary breakdown Low input and output leakage Independent, electrically isolated N- and P- channels Applications Medical ultrasound transmitters High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers ► ► ► ► ► ► ► ► ► ► ► ► ► N- and P- Channel Enhancement-Mode Dual MOSFET General Description The Supertex TC6320 consists of high voltage low threshold N-channel and P-channel MOSFETs in an SO- 8 package. Both MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. The TC6320 is a complimentary, high-speed, high voltage, gate-clamped N- and P-channel MOSFET pair in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Options 8-Lead SOIC (Narrow Body) TC6320 TC6320TG TC6320TG-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Value Drain to source voltage BV DSS Drain to gate voltage BV DGS Operating and storage temperature -55°C to +150°C Soldering temperature1 +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note 1. Distance of 1.6mm from case for 10 seconds. Pin Configuration BV DSS/BVDGS R DS(ON) (MAX) N-Channel P-Channel N-Channel P-Channel 200V -200V 7.0Ω 8.0Ω S1 G1 S2 G2 D2 D2 D1 D1 SO-8 Package (top view) 1 2 36 7 8 N-Channel P-Channel 45 |
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