(SEE REVERSE SIDE)

R1

2N3789

2N3790

2N3791

2N3792

PNP POWER TRANSISTORS

JEDEC TO-3 CASE

DATA SHEET

DESCRIPTION

The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar

process and designed for medium speed switching and amplifier applications.

MAXIMUM RATINGS (TC=25°C unless otherwise noted)

2N3789

2N3790

SYMBOL

2N3791

2N3792

UNITS

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

7.0

V

Collector Current

IC

10

A

Base Current

IB

4.0

A

Power Dissipation

PD

150

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

1.17

°C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

2N3789

2N3790

2N3791

2N3792

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE= Rated VCEO, VEB=1.5V

1.0

1.0

mA

ICEV

VCE= Rated VCEO, VEB=1.5V, TC=150°C

5.0

5.0

mA

IEBO

VEB=7.0V

5.0

5.0

mA

BVCEO

IC=200mA

60

80

V

VCE(SAT)

IC=4.0A, IB=400mA (2N3789, 2N3790)

1.0

1.0

V

VCE(SAT)

IC=5.0A, IB=500mA (2N3791, 2N3792)

1.0

1.0

V

VBE(ON)

VCE=2.0V, IC=5.0A (2N3789, 2N3790)

2.0

2.0

V

VBE(ON)

VCE=2.0V, IC=5.0A (2N3791, 2N3792)

1.8

1.8

V

VBE(ON)

VCE=4.0V, IC=10A

4.0

4.0

V

hFE

VCE=2.0V, IC=1.0A (2N3789, 2N3790)

25

90

25

90

hFE

VCE=2.0V, IC=1.0A (2N3791, 2N3792)

50

180

50

180

hFE

VCE=2.0V, IC=3.0A (2N3789, 2N3790)

15

15

hFE

VCE=2.0V, IC=3.0A (2N3791, 2N3792)

30

30

fT

VCE=10V, IC=500mA, f=1.0MHz

4.0

4.0

MHz