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TLP705 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TLP705 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP705 2004-10-19 3 Electrical Characteristics (Ta ==== −−−−40 to 100°C, unless otherwise specified) Characteristics Symbol Test Circu it Test Condition Min Typ.* Max Unit Forward voltage VF IF = 10 mA, Ta = 25°C 1.6 1.8 V Temperature coefficient of forward voltage ∆VF/∆Ta IF = 10 mA −2.0 mV/°C Input reverse current IR VR = 5 V, Ta = 25°C 10 µA Input capacitance CT V = 0 V , f = 1 MHz,Ta = 25°C 45 pF IOPH1 V6-5 = 4 V −0.15 −0.35 “H” Level IOPH2 1 VCC = 15 V IF = 10 mA V6-5 = 10 V −0.3 −0.6 IOPL1 V5-4 = 2 V 0.15 0.36 Output current (Note 8) “L” Level IOPL2 2 VCC = 15 V IF = 0 mA V5-4 = 10 V 0.3 0.62 A “H” Level VOH 3 IO = −100 mA, IF = 10 mA 6.0 8.5 Output voltage “L” Level VOL 4 VCC = 10 V IO = 100 mA, VF = 0.8 V 0.4 1.0 V “H” Level ICCH 5 IF = 10 mA 2.0 3.0 Supply current “L” Level ICCL 6 VCC = 10 to 20 V VO open IF = 0 mA 2.0 3.0 mA Threshold input current L → H IFLH VCC = 15 V, VO > 1 V 2.5 8 mA Threshold input voltage H → L VFHL VCC = 15 V, VO < 1 V 0.8 V Supply voltage VCC 10 20 V *: All typical values are at Ta = 25°C Note 8: Duration of IO time ≤ 50 µs Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS V = 0 V, f = 1MHz (Note 5) ― 1.0 ― pF Isolation resistance RS R.H. ≤ 60%,VS = 500V (Note 5) 1×10 12 10 14 ― Ω AC, 1 minute 5000 ― ― AC, 1 second, in oil ― 10000 ― Vr m s Isolation voltage BVS DC,1 minute,in oil ― 10000 ― Vdc |
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