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6N60L-ATA3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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6N60L-ATA3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
1 / 7 page UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2007 Unisonic Technologies Co., Ltd QW-R502-117.A 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) = 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: 6N60L ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 6N60-x-TA3-T 6N60L-x-TA3-T TO-220 G D S Tube |
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