IRF3710LPBF datasheet(6/11 Pages) IRF

Il numero della parte	IRF3710LPBF

Spiegazioni elettronici	HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

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Produttore elettronici	IRF [International Rectifier]

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IRF3710S/LPbF

6

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QG

QGS

QGD

VG

Charge

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

VGS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

25

50

75

100

125

150

175

0

110

220

330

440

550

Starting T , Junction Temperature

( C)

J

°

ID

TOP

BOTTOM

11A

20A

28A

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
International Rectifier	IRF3710L	184Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
International Rectifier	IRFZ44VZPBF	355Kb / 13P	HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )
	IRFP3710PBF	233Kb / 9P	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )
	IRF3710S	184Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
	IRFP3710	185Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)
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	IRFL4310PBF	662Kb / 9P	HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 0.20廓 , ID = 1.6A )
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	IRF1407SPBF	258Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )
	IRFR5305PBF	248Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )

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IRF3710LPBF Scheda tecnica(PDF) 6 Page - International Rectifier

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