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BCW33 Scheda tecnica(PDF) 1 Page - Diotec Semiconductor |
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BCW33 Scheda tecnica(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BCW31 ... BCW33 BCW31 ... BCW33 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN Version 2006-07-28 Dimensions - Maße [mm] 1 = B 2 = E 3 = C Power dissipation – Verlustleistung 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW31 BCW32 BCW33 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 32 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 32 V Collector-Base-voltage – Kollektor-Basis-Spannung C open VEB0 5 V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA BCW31 BCW32 BCW33 hFE hFE hFE – – – 90 150 270 – – – VCE = 5 V, IC = 2 mA BCW31 BCW32 BCW33 hFE hFE hFE 110 200 420 – – – 220 450 800 Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat VCEsat – – 120 mV 210 mV 250 mV – 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 1.1 0.4 2.9 ±0.1 1 2 3 Type Code 1.9 |
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