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STP10NK80Z Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP10NK80Z
Spiegazioni elettronici  N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/ TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
800
V
VDGR
Drain-gate voltage (RGS = 20KΩ)
800
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
9
9(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC=100°C
6
6(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
36
36(1)
A
PTOT
Total dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
Vesd(G-S)
G-S ESD (HBM C=100pF, R=1.5k
Ω)
4KV
dv/dt(3)
3.
ISD ≤9A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (DC)
--
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 TO-220FP
TO-247
Rthj-case
Thermal resistance junction-case Max
0.78
3.1
0.78
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
50
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
9A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
290
mJ


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