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BUZ110SE3045 Scheda tecnica(PDF) 4 Page - Infineon Technologies AG |
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BUZ110SE3045 Scheda tecnica(HTML) 4 Page - Infineon Technologies AG |
4 / 8 page BUZ 110S Data Book 4 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 40 V, ID = 80 A 26 nC 17 Qgs - - 41 Qgd Gate to drain charge VDD = 40 V, ID = 80 A 61.5 Gate charge total VDD = 40 V, ID = 80 A, VGS = 0 to 10 V - 85 130 Qg Gate plateau voltage VDD = 40 V, ID = 80 A V(plateau) 5.8 - V - Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 80 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 320 Inverse diode forward voltage VGS = 0 V, IF = 160 A VSD - 1.3 V 2 Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs trr - 80 ns 120 Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Qrr - µC 0.17 0.25 |
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