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BUZ110SE3045 Scheda tecnica(PDF) 4 Page - Infineon Technologies AG

Il numero della parte BUZ110SE3045
Spiegazioni elettronici  SIPMOS짰 Power Transistor
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ110SE3045 Scheda tecnica(HTML) 4 Page - Infineon Technologies AG

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BUZ 110S
Data Book
4
05.99
Electrical Characteristics, at
Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 80 A
26
nC
17
Qgs
-
-
41
Qgd
Gate to drain charge
VDD = 40 V, ID = 80 A
61.5
Gate charge total
VDD = 40 V, ID = 80 A, VGS = 0 to 10 V
-
85
130
Qg
Gate plateau voltage
VDD = 40 V, ID = 80 A
V(plateau)
5.8
-
V
-
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
IS
-
-
80
A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
-
320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
VSD
-
1.3
V
2
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
trr
-
80
ns
120
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
-
µC
0.17
0.25


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