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BD249B Scheda tecnica(PDF) 1 Page - Power Innovations Ltd |
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BD249B Scheda tecnica(HTML) 1 Page - Power Innovations Ltd |
1 / 6 page BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JUNE 1973 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q Designed for Complementary Use with the BD250 Series q 125 W at 25°C Case Temperature q 25 A Continuous Collector Current q 40 A Peak Collector Current q Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 1 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. RATING SYMBOL VALUE UNIT Collector-emitter voltage (RBE = 100 Ω) BD249 BD249A BD249B BD249C VCER 55 70 90 115 V Collector-emitter voltage (IC = 30 mA) BD249 BD249A BD249B BD249C VCEO 45 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 25 A Peak collector current (see Note 1) ICM 40 A Continuous base current IB 5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3 W Unclamped inductive load energy (see Note 4) ½LIC 2 90 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 250 °C |
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