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LB11873 Scheda tecnica(PDF) 3 Page - Sanyo Semicon Device

Il numero della parte LB11873
Spiegazioni elettronici  Monolithic Digital IC For Polygonal Mirror Motors Three-Phase Brushless Motor Driver
Download  14 Pages
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LB11873 Scheda tecnica(HTML) 3 Page - Sanyo Semicon Device

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LB11873
No.A0081-3/14
Continued from preceding page.
Ratings
Unit
Parameter
Symbol
Conditions
min
typ
max
FGS Pin
Output saturation voltage
VOL (FGS)
IFGS = 7mA
0.15
0.5
V
Output leakage current
IL (FGS)
VO = VCC
10
μA
CSD Oscillator Circuit
Oscillator frequency
f (CSD)
C = 0.033
μF
31
Hz
High-level output voltage
VOH (CSD)
3.50
3.75
4.00
V
Low-level output voltage
VOL (CSD)
1.00
1.30
1.60
V
Amplitude
V (CSD)
2.20
2.45
2.80
Vp-p
External capacitor charge
current
ICHG1
VCSD = 2V
-7
-5
-3
μA
External capacitor discharge
current
ICHG2
VCSD = 2V
3
5
7
μA
Lock detection delay counts
CSDCT1
7
Clock disconnected protection
counts
CSDCT2
2
Constraint protection operation
counts
CSDCT3
31
Initial reset voltage
VRES
0.6
0.8
V
Phase Comparator Output
High-level input voltage
VPDH
IOH = -100μA
VREG - 0.2
VREG - 0.1
V
Low-level input voltage
VPDL
IOL = 100μA
0.2
0.3
V
Input source current
IPD+
VPD = VREG/2
-0.5
mA
Input sink current
IPD-
VPD = VREG/2
1.5
mA
Phase Lock Detection Output
Output saturation voltage
VOL (LD)
ILD = 10mA
0.15
0.5
V
Output leakage current
IL (LD)
VO = VCC
10
μA
Error Amplifier Block
Input offset voltage
VIO (ER)
Design target value*
-10
10
mV
Input bias current
IB (ER)
-1
1
μA
High-level output voltage
VOH (ER)
IEI = -0.1mA, no load
3.7
4.0
4.3
V
Low-level output voltage
VOL (ER)
IEI = 0.1mA, no load
0.7
1.0
1.3
V
DC bias level
VB (ER)
-5%
VREG/2
5%
V
Current Llimiter Circuit
Drive gain 1
GDF1
In the phase locked state
0.4
0.5
0.6
Times
Drive gain 2
GDF2
In the unlocked state
0.8
1.0
1.2
Times
Llimiter voltage 1
VRF1
VCC - VM, forward mode
0.45
0.5
0.55
V
Llimiter voltage 2
VRF2
VCC - VM, reverse mode
0.225
0.25
0.275
V
Thermal shutdown circuit
Thermal shutdown operating
temperature
TSD
Design target value* (junction
temperature)
150
170
°C
Thermal shutdown temperature
hysteresis
ΔTSD
Design target value* (junction
temperature)
40
°C
Low Voltage Protection Circuit
Operating voltage
VSDL
8.1
8.45
8.9
V
Hysteresis
ΔVSD
0.2
0.35
0.5
V
CLK pin
External input frequency
fI (CLK)
0.1
10
kHz
High-level input voltage
VIH (CLK)
2.0
VREG
V
Low-level input voltage
VIL (CLK)
0
1.0
V
Input open voltage
VIO (CLK)
3.0
V
Hysteresis
VIS (CLK)
0.25
V
High-level input current
IIH (CLK)
VCKIN = VREG
115
150
μA
Low-level input current
IIL (CLK)
VCKIN = 0V
-220
-175
μA
Continued on next page.
Note : * The design specification items are design guarantees and are not measured.


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