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FW261 Scheda tecnica(PDF) 2 Page - Sanyo Semicon Device |
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FW261 Scheda tecnica(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page FW261 No.8749-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 8.6 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 1.6 nC Diode Forward Voltage VSD IS=5A, VGS=0V 0.9 1.2 V Package Dimensions Electrical Connection unit : mm 7005-003 Switching Time Test Circuit PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=5A RL=3Ω VDD=15V VOUT FW261 VIN 10V 0V VIN 14 5 8 5.0 0.595 1.27 0.2 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 876 5 123 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view |
Codice articolo simile - FW261_07 |
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Descrizione simile - FW261_07 |
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