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FW232A Scheda tecnica(PDF) 1 Page - Sanyo Semicon Device |
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FW232A Scheda tecnica(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page FW232A No.8361-1/4 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PA MS IM TB-00001458 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. FW232A N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 2.5V drive. • Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 8A Drain Current (PW ≤10s) ID Duty cycle ≤1% 9 A Drain Current (PW ≤10µs) IDP Duty cycle ≤1% 52 A Allowable Power Dissipation PD Mounted on a ceramic board (1500mm2!0.8mm) 1unit, PW ≤10s 2.3 W Total Dissipation PT Mounted on a ceramic board (1500mm2!0.8mm), PW ≤10s 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=8A 8.4 14 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=8A, VGS=4V 19 26 m Ω RDS(on)2 ID=4A, VGS=2.5V 23 34 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 1430 pF Output Capacitance Coss VDS=10V, f=1MHz 195 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 190 pF Turn-ON Delay Time td(on) See specified Test Circuit. 24 ns Rise Time tr See specified Test Circuit. 200 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns Fall Time tf See specified Test Circuit. 130 ns Marking :W232A Continued on next page. Ordering number : ENN8361 |
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Descrizione simile - FW232A |
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