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BC337A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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BC337A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com BC337A Rev. 1.0.0 1 September 2007 BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. Absolute Maximum Ratings T C=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T a=25°C unless otherwise noted *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. Electrical Characteristics T C=25°C unless otherwise noted Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3.These ratings are based on a maximum junction temperature of 150degrees C. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCES Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 60 V BVCES Collector-Emitter Cutoff Voltage IC = 100μA 60 V BVEBO Emitter-Base Breakdown Voltage IE = 100μA 5 V IEBO Emitter Cut-off Current VEB = 5V 10 μA ICBO Collector Cut-off Current VCB = 20V, T = 25 °C T = 150 °C 0.1 5 μA hFE DC Current Gain VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA 100 40 400 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 1.2 V 1. Collector 2. Base 3. Emitter TO-92 1 |
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