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SEMICONDUCTOR

TECHNICAL DATA

KMB7D0DN40QA

Dual N-Ch Trench MOSFET

Revision No : 0

GENERAL DESCRIPTION

This planer stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment and SMPS.

FEATURES

Drain-Source ON Resistance.

Super High Dense Cell Design

High Power and Current Handing Capability

Maximum Ratings (Ta=25

Unless otherwise noted)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05

T

P

1.27

MILLIMETERS

DIM

A

4.85

0.2

+

_

B1

3.94

0.2

+

_

B2

6.02

0.3

+

_

D

0.4

0.1

+

_

G

0.15+0.1/-0.05

H

1.63

0.2

+

_

L

0.65

0.2

+

_

G1

S1

D1

D1

G2

D2

D2

S2

N-Channel MOSFET

P-Channel MOSFET

1

2

3

4

8

7

6

5

S1

G1

S2

G2

D1

D1

D2

D2

PIN CONNECTION (TOP VIEW)

2007. 4. 3

CHARACTERISTIC

SYMBOL

PATING

UNIT

Drain Source Voltage

40

V

Gate Source Voltage

25

V

Drain Current

DC

7

A

Pulsed

(note1)

22

A

Drain Source Diode Forward Current

1.7

A

Drain Power Dissipation

25

2

W

100

1.44

W

Maximum Junction Temperature

-55~150

Storage Temperature Range

-55~150

Thermal Resistance, Junction to Ambient

62.5

/W