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TEA1210 Scheda tecnica(PDF) 8 Page - NXP Semiconductors |
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TEA1210 Scheda tecnica(HTML) 8 Page - NXP Semiconductors |
8 / 20 page 1999 Mar 08 8 Philips Semiconductors Preliminary specification High efficiency, high current DC/DC converter TEA1210TS External synchronization If an external high-frequency clock is applied to the synchronization clock input, the switching frequency in PWM mode will be exactly that frequency divided by 22. In PFM mode, the switching frequency is always lower. The quiescent current of the device increases when an external clock is applied. In case no external synchronization is necessary, the synchronization clock input must be connected to ground level. Behaviour at input voltage exceeding the specified range In general, an input voltage exceeding the specified range is not recommended since instability may occur. There are two exceptions: • Upconversion: at an input voltage higher than the target output voltage, but up to 6 V, the converter will stop switching. As long as the device is in the PWM mode, the internal P-type power MOSFET will be conducting and the output voltage will equal VI minus some resistive voltage drop. In case the converter is in the PFM mode at high input voltage, the output voltage will equal VI minus the voltage drop over the external diode. The current limiting function is not active. • Downconversion: when the input voltage is lower than the target output voltage, but higher than 2.9 V, the P-type power MOSFET will stay conducting resulting in an output voltage being equal to the input voltage minus some resistive voltage drop. The current limiting function remains active. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Equivalent to discharging a 100 pF capacitor through a 1.5 k Ω resistor. 2. Equivalent to discharging a 200 pF capacitor via a 0.75 µH inductor. THERMAL CHARACTERISTICS QUALITY SPECIFICATION Product lifetime is fully guaranteed over 2000 hours of operation at an ambient temperature of 60 °C with a continuously repeating current profile on pins LX of 4 A during 577 µs followed by 1 A during 4.0 ms. All remaining quality specifications are in accordance with “SNW-FQ-611 part E”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vn voltage on any pin shut-down mode −0.2 +6.5 V operating mode −0.2 +5.9 V Tj junction temperature −40 +150 °C Tamb operating ambient temperature −40 +80 °C Tstg storage temperature −40 +125 °C Ves electrostatic handling human body model; note 1 −1500 +1500 V machine model; note 2 −300 +300 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 140 K/W |
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