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GSS4511 Scheda tecnica(PDF) 3 Page - GTM CORPORATION |
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GSS4511 Scheda tecnica(HTML) 3 Page - GTM CORPORATION |
3 / 7 page GSS4511 Page: 3/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B P-Channel Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -35 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.02 - V/ : Reference to 25 : , ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 9 - S VDS=-10V, ID=-6A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25 : ) - - -1 uA VDS=-35V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - -25 uA VDS=-28V, VGS=0 - 32 40 VGS=-10V, ID=-6A Static Drain-Source On-Resistance2 RDS(ON) - 50 60 m Ł VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 10 16 Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 6 - nC ID=-6A VDS=-28V VGS=-4.5V Turn-on Delay Time2 Td(on) - 10 - Rise Time Tr - 6 - Turn-off Delay Time Td(off) - 26 - Fall Time Tf - 7 - ns VDS=-18V ID=-1A VGS=-10V RG=3.3 Ł RD=18 Ł Input Capacitance Ciss - 690 1100 Output Capacitance Coss - 165 - Reverse Transfer Capacitance Crss - 130 - pF VGS=0V VDS=-25V f=1.0MHz Gate Resistance Rg - 5.2 7.8 Ł f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-1.7A, VGS=0V Reverse Recovery Time2 Trr - 20 - ns Reverse Recovery Charge Qrr - 12 - nC IS=-6A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. |
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