GSS4505 datasheet(2/7 Pages) GTM

Il numero della parte	GSS4505

Spiegazioni elettronici	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download	7 Pages

Scroll/Zoom	100%

Produttore elettronici	GTM [GTM CORPORATION]

Homepage	http://www.gtm.com.tw

Logo

2 / 7 page

GSS4505

Page: 2/7

ISSUED DATE :2005/08/29

REVISED DATE :2005/09/29B

N-Channel Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

30

-

V

VGS=0, ID=250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

Tj

-

0.02

-

V/ :

Reference to 25 : , ID=1mA

Gate Threshold Voltage

VGS(th)

1.0

-

3.0

V

VDS=VGS, ID=250uA

Forward Transconductance

gfs

-

13

-

S

VDS=10V, ID=8A

Gate-Source Leakage Current

IGSS

-

D100

nA

VGS= D20V

Drain-Source Leakage Current(Tj=25 : )

-

1

uA

VDS=30V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-

25

uA

VDS=24V, VGS=0

-

20

VGS=10V, ID=8A

Static Drain-Source On-Resistance2

RDS(ON)

-

28

m Ł

VGS=4.5V, ID=5A

Total Gate Charge2

Qg

-

20

30

Gate-Source Charge

Qgs

-

5

-

Gate-Drain (“Miller”) Change

Qgd

-

12

-

nC

ID=8A

VDS=24V

VGS=4.5V

Turn-on Delay Time2

Td(on)

-

12

-

Rise Time

Tr

-

8

-

Turn-off Delay Time

Td(off)

-

31

-

Fall Time

Tf

-

12

-

ns

VDS=15V

ID=1A

VGS=10V

RG=3.3 Ł

RD=15 Ł

Input Capacitance

Ciss

-

1450

2230

Output Capacitance

Coss

-

320

-

Reverse Transfer Capacitance

Crss

-

230

-

pF

VGS=0V

VDS=25V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-

1.2

V

IS=1.7A, VGS=0V

Reverse Recovery Time2

Trr

-

27

-

ns

Reverse Recovery Charge

Qrr

-

18

-

nC

IS=8A, VGS=0V

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad.

Codice articolo simile - GSS4505

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
GTM CORPORATION	GSS4500	436Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4501	423Kb / 9P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4501S	492Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4502	589Kb / 9P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4503	557Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

More results

Descrizione simile - GSS4505

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
GTM CORPORATION	GSS4503	557Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4565	559Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GT2530	390Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
List of Unclassifed Man...	AP2030M	112Kb / 11P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electron...	AP2530GY	85Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electron...	AP2531GY	85Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Jiangsu Changjiang Elec...	CJQ4503	5Mb / 6P	N-and P-Channel Enhancement Mode Power MOSFET
Cystech Electonics Corp...	MTC3588N6	856Kb / 12P	N- And P-Channel Enhancement Mode Power MOSFET
Advanced Power Electron...	AP4501GSD	96Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	AP4511GD	155Kb / 8P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	AP4569GD	96Kb / 7P	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

More results

GSS4505 Scheda tecnica(PDF) 2 Page - GTM CORPORATION

GSS4505 Scheda tecnica(HTML) 2 Page - GTM CORPORATION

Codice articolo simile - GSS4505

Descrizione simile - GSS4505

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL