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GSS4501 Scheda tecnica(PDF) 3 Page - GTM CORPORATION |
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GSS4501 Scheda tecnica(HTML) 3 Page - GTM CORPORATION |
3 / 9 page GSS4501 Page: 3/9 ISSUED DATE :2005/08/24 REVISED DATE :2006/11/09C P-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.028 - V/ : Reference to 25 : , ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 8.5 - S VDS=-10V, ID=-5.3A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±16V Drain-Source Leakage Current(Tj=25 : ) - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - -25 uA VDS=-24V, VGS=0 - - 50 VGS=-10V, ID=-5.3A Static Drain-Source On-Resistance2 RDS(ON) - - 90 m VGS=-4.5V, ID=-4.2A Total Gate Charge2 Qg - 20 - Gate-Source Charge Qgs - 3.5 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=-5.3A VDS=-15V VGS=-10V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 20 - Turn-off Delay Time Td(off) - 45 - Fall Time Tf - 27 - ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 Input Capacitance Ciss - 790 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 120 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-2.6A, VGS=0V, Tj=25 : Continuous Source Current (Body Diode) IS - - -1.67 A VD=VG=0V, VS=-1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. |
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