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TEA1081T Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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TEA1081T Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
6 / 16 page September 1994 6 Philips Semiconductors Product specification Supply circuit with power-down for telephone set peripherals TEA1081 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VLN positive line voltage continuous − 12 V during switch-on or line interruptions − 12.5 V VLN(RM) repetitive peak line voltage for a 1 ms pulse per 5 s 12 Ω resistor in series with pin 1 − 28 V VI input voltage (all other terminals) VVN − 0.5 VLN + 0.5 V I1 DC input current TEA1081 − 120 mA TEA1081T − 80 mA II input current (all other terminals) −1+1 mA Ptot total power dissipation see Fig.5 Tamb operating ambient temperature −25 +70 °C Tstg storage temperature −40 +125 °C Tj junction temperature − +125 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air TEA1081 120 K/W TEA1081T (mounted on a printed-circuit board of 50 × 50 × 1.5 mm) 260 K/W Fig.5 Power derating curves. (1) TEA1081. (2) TEA1081T. handbook, halfpage 0 40 120 800 600 200 0 400 MLC170 80 20 100 60 (1) (2) Ptot (mW) T ( C) amb o |
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