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JUNCTION FIELD EFFECT TRANSISTOR

2SK3230C

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET

Document No. D18894EJ1V0DS00 (1st edition)

Date Published August 2007 NS

Printed in Japan

2007

DESCRIPTION

The 2SK3230C contains a diode and high resistivity

between its gates and sources, for achieving short stability

time during power-on. In addition, because of its compact

package and low noise, the 2SK3230C is especially suitable

for compact ECMs for audio or mobile devices such as cell-

phones.

FEATURES

• Low noise:

• Containing a diode and high resistivity, short stability time is

achieved during power-on.

• Small package: SC-89 (TUSM)

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3230C

SC-89 (TUSM)

°C)

−1.0 V)

20

V

Gate to Drain Voltage

−20

V

Drain Current

10

mA

Gate Current

10

mA

Total Power Dissipation

100

mW

Junction Temperature

125

°C

Storage Temperature

−55 to +125

°C

Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

PACKAGE DRAWING (Unit: mm)

0.3 ±0.05

2

0.5

0.5

1.6 ±0.1

3

1

0.1

+0.1

–0.05

0.2

+0.1

–0

EQUIVALENT CIRCUIT

3

2

1

1: Source

2: Drain

3: Gate