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STD1802 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD1802 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 10 page STD1802 Electrical characteristics 3/10 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% Table 4. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = 40V 0.1 µA IEBO Emitter cut-off current (IC =0) VEB = 4V 0.1 µA V(BR)CBO Collector-base breakdown voltage (IE = 0) IC =100µA 80 V V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC =1mA 60 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE =100µA 6V VCE(sat) (1) Collector-emitter saturation voltage IC =2A _ _ IB =100mA IC =3A __ _ IB =150mA 150 200 300 400 mV mV VBE(sat) (1) Base-emitter saturation voltage IC =2A _ _ IB =100mA 0.9 1.2 V hFE (1) DC current gain IC =100mA VCE =2V IC =3A VCE =2V 200 100 400 fT Transition frequency VCE =10V IC =50mA 150 MHz CCBO Collector-base capacitance VCB =10V f = 1MHz 50 pF tON ts tf Resistive load Turn-on time Storage time Fall time IC =1A VCC =30V IB1 =-IB2 =0.1A 50 1.35 120 ns µs ns |
Codice articolo simile - STD1802_07 |
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Descrizione simile - STD1802_07 |
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