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TC341-20 Scheda tecnica(PDF) 9 Page - Texas Instruments |
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TC341-20 Scheda tecnica(HTML) 9 Page - Texas Instruments |
9 / 17 page TC341 780×488 PIXEL CCD IMAGE SENSOR SOCS083A – OCTOBER 2002 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating ranges of supply voltage at operating free-air temperature (unless otherwise noted) MIN TYP‡ MAX UNIT Charge conversion factor 6 µV/e τ Signal-response delay time (Note 2) 6 10 ns Output resistance 500 Ω Output dc level 3.6 5.5 V Saturation voltage for progressive scan 240 mV Saturation voltage for interlace scan by line summing 480 mV Amplifier noise-equivalent signal without CDS† (Note 3) 50 e Amplifier noise-equivalent signal with CDS† (Note 3) 35 e Output signal dynamic range without CDS† 64 dB Output signal dynamic range with CDS† 67 dB Response linearity (Note 4) 1 Charge-transfer efficiency parallel register 0.9999 1 Charge-transfer efficiency serial register 0.9999 1 Supply current mA IAG SAG CI Inp t capacitances SRG pF CI Input capacitances RSG pF TRG ODB ADB SRG high P lse amplit de rejection ratio SRG low dB Pulse amplitude rejection ratio RSG high (Note 5) dB RSG low (Note 5) ODB high (Note 6) † All typical values are at TA = 25°C. ‡ CDS is a signal processing technique that improves performance by minimizing undesirable effects of reset noise. NOTES: 2. The signal delay time is measured from the falling edge of the reset pulse (SRG) to 90% of valid signal. 3. The noise measurement is performed at 14.0 MHz. The value shown in the table is RMS value. 4. The response linearity is measured as a deviation from the straight line of the signal transfer curve (voltage output versus light input) at the output saturation point. 5. This level affects only the reset feed through. 6. The charge clearing pulse applied to ODB during the charge readout may cause a slight feed through in the output. To avoid this problem it is recommended to apply the charge clearing pulse only during the horizontal blanking times. |
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