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TC4427EOA Scheda tecnica(PDF) 3 Page - Microchip Technology

Il numero della parte TC4427EOA
Spiegazioni elettronici  1.5A Dual High-Speed Power MOSFET Drivers
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Produttore elettronici  MICROCHIP [Microchip Technology]
Homepage  http://www.microchip.com
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© 2006 Microchip Technology Inc.
DS21422D-page 3
TC4426/TC4427/TC4428
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ..................................................... +22V
Input Voltage, IN A or IN B
..................................... (VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA ≤ 70°C)
DFN .............................................................. Note 3
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range .............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
DC CHARACTERISTICS
Name
Function
NC
No Connection
IN A
Input A
GND
Ground
IN B
Input B
OUT B
Output B
VDD
Supply Input
OUT A
Output A
NC
No Connection
Electrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
V
Note 2
Logic ‘0’, Low Input Voltage
VIL
——
0.8
V
Input Current
IIN
-1.0
+1.0
μA0V ≤ VIN ≤ VDD
Output
High Output Voltage
VOH
VDD – 0.025
V
DC Test
Low Output Voltage
VOL
0.025
V
DC Test
Output Resistance
RO
—7
10
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—1.5
A
VDD = 18V
Latch-Up Protection
Withstand Reverse Current
IREV
> 0.5
A
Duty cycle
≤ 2%, t ≤ 300 μs
VDD = 18V
Switching Time (Note 1)
Rise Time
tR
—19
30
ns
Figure 4-1
Fall Time
tF
—19
30
ns
Figure 4-1
Delay Time
tD1
—20
30
ns
Figure 4-1
Delay Time
tD2
—40
50
ns
Figure 4-1
Power Supply
Power Supply Current
IS
4.5
0.4
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1:
Switching times ensured by design.
2:
For V temperature range devices, the VIH (Min) limit is 2.0V.
3:
Package power dissipation is dependent on the copper pad area on the PCB.


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