LF353 datasheet(3/9 Pages) STMICROELECTRONICS

Il numero della parte	LF353

Spiegazioni elettronici	WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS

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ELECTRICAL CHARACTERISTICS

VCC = ±15V, Tamb = +25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

Vio

Input Offset Voltage (Rs = 10kΩ)

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

310

13

mV

DVio

Input Offset Voltage Drift

10

µV/°C

Iio

Input Offset Current- note 1)

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

1.

The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature.

5100

4

pA

nA

Iib

Input Bias Current -note 1

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

20

200

20

nA

Avd

Large Signal Voltage Gain

(R

L = 2kΩ, Vo = ±10V)

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

50

25

200

V/mV

SVR

Supply Voltage Rejection Ratio (RS = 10kΩ)

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

80

86

dB

ICC

Supply Current, no load

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

1.4

3.2

mA

Vicm

Input Common Mode Voltage Range

±11

+15

-12

V

CMR

Common Mode Rejection Ratio (RS = 10kΩ)

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

70

86

dB

IOS

Output Short-circuit Current

Tamb = +25°C

Tmin ≤ Tamb ≤ Tmax

10

40

60

mA

±Vopp

Output Voltage Swing

Tamb = +25°C

RL = 2kΩ

RL = 10kΩ

Tmin ≤ Tamb ≤ Tmax

RL = 2kΩ

RL = 10kΩ

10

12

10

12

13.5

V

SR

Slew Rate

Vi = 10V, RL = 2kΩ, CL = 100pF, Tamb = +25°C, unity gain

12

16

V/

µs

tr

Rise Time

Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = +25°C, unity gain

0.1

µs

Kov

Overshoot

Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = +25°C, unity gain

10

%

GBP

Gain Bandwidth Product

f = 100kHz, Tamb = +25°C,Vin = 10mV, RL = 2kΩ, CL = 100pF

2.5

4

MHz

Ri

Input Resistance

1012

Ω

THD

Total Harmonic Distortion ( f = 1kHz, Av = 20dB

RL = 2kΩ, CL = 100pF, Tamb = +25°C,Vo = 2Vpp)

0.01

en

Equivalent Input Noise Voltage

RS = 100Ω, f = 1KHz

15

∅m

Phase Margin

45

Degrees

Vo1/Vo2 Channel Separation (Av = 100, Tamb = +25°C)

120

dB

nV

Hz

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