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THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

TPR 175

175 Watts, 50 Volts, Pulsed

Avionics 1030 - 1090 MHz

GENERAL DESCRIPTION

CASE OUTLINE

The TPR 175 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1030-1090 MHz. The

device has gold thin-film metallization for proven highest MTTF. The

transistor includes input prematch for broadband capability. Low thermal

resistance package reduces junction temperature, extends life.

55CX, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

388 Watts

o2

Maximum Voltage and Current

BVces

Collector to Base Voltage

55 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

12.5 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

η

c

VSWR

Power Out

F = 1090 MHz

175

Watts

Power Input

Vcc = 50 Volts

25

Watts

Power Gain

8.0

9.0

dB

Collector Efficiency

40

%

Load Mismatch Tolerance

00:1

PW = 10

µsec

DF = 1%

F = 1090 MHz

BVebo

BVces

Emitter to Base Breakdown

Ie = 5 mA

3.5

Volts

Collector to Emitter Breakdown

Ic = 20 mA

55

Volts

DC - Current Gain

Ic = 20 mA, Vce = 5V

10

Thermal Resistance

0.45

C/W

o

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Issue A February 1998