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SD1143-01 Scheda tecnica(PDF) 1 Page - Advanced Power Technology |
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SD1143-01 Scheda tecnica(HTML) 1 Page - Advanced Power Technology |
1 / 3 page SD1143-01 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: DESCRIPTION: The SD1143-01 is a 12.5 V epitaxial silicon, NPN transistor designed primarily for Class C, VHF communications equipment. Emitter ballast resistors provide high VSWR operating capability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCER Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 2.0 A PDISS Power Dissipation 20 W TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 °°C THERMAL DATA THERMAL DATA RTH(J-C) Junction-case Thermal Resistance* 8.75 °°C/W Features Features • 175 MHz • 12.5 VOLTS • P OUT = 10 W • G P = 10 dB MINIMUM • COMMON EMITTER CONFIGURATION RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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