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MSAER57N10A Scheda tecnica(PDF) 1 Page - Microsemi Corporation |
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MSAER57N10A Scheda tecnica(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  Features • MOSKEYTM - Mosfet and Schottky in a single package • Ultra Low On-Resistance • 175°C Operating Temperature • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request (MSAER57N10AR) • Available with TX/TXV-level screening (MSAER57N10AV) or S-level screening (MSAER57N10AS) i.a.w. Microsemi internal procedure, PS11.50 MSAER57N10A 100 Volts 57 Amps 25 m Ω 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 N-CHANNEL ENHANCEMENT MODE POWER MOSFET + SCHOTTKY Maximum Ratings @ 25 °C (unless otherwise specified) DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 100 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Continuous Drain Current Tj= 25 °C Tj= 100 °C ID25 ID100 57 40 Amps Peak Drain Current, pulse width limited by TJmax IDM 180 Amps Repetitive Avalanche Current IAR 28 Amps Repetitive Avalanche Energy EAR 15 mJ Single Pulse Avalanche Energy EAS 200 mJ Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C dv/dt 5.0 V/ns Power Dissipation @ TC = 100°C PD 215 Watts Junction Temperature Range Tj -55 to +175 °C Storage Temperature Range Tstg -55 to +175 °C Continuous Source Current (Body Diode) IS 57 Amps Pulse Source Current (Body Diode) ISM 360 Amps Thermal Resistance, Junction to Case θJC 0.7 °C/W Mechanical Outline CoolPackTM1 Note: Pin-out shown for standard polarity GATE SOURCE DRAIN Revision 1 |
Codice articolo simile - MSAER57N10A |
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Descrizione simile - MSAER57N10A |
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