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STD4NK80Z-1 Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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STD4NK80Z-1 Scheda tecnica(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 6/18 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 3 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 12 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 3 A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3 A, di/dt = 100A/µs, VDD=80 V, Tj=150°C (see Figure 20) 400 1520 7.6 ns µC A |
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