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TDA2616 Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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TDA2616 Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page  July 1994 6 Philips Semiconductors Product specification 2 x 12 W hi-fi audio power amplifiers with mute TDA2616/TDA2616Q CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply ±VP supply voltage range − 16 21 V IORM repetitive peak output current − 2.2 − A Operating position; note 1 ±VP supply voltage range 7.5 16 21 V IP total quiescent current RL = ∞ 18 40 70 mA PO output power THD = 0.5% 10 12 − W THD = 10% 12 15 − W THD total harmonic distortion PO = 6 W − 0.15 0.2 % B power bandwidth THD = 0.5%; note 2 − 20 to 20 000 − Hz Gv voltage gain 29 30 31 dB G v gain unbalance − 0.2 1 dB Vno noise output voltage note 3 − 70 140 µV Z i input impedance 14 20 26 k Ω SVRR supply voltage ripple rejection note 4 40 60 − dB α channel separation RS = 0 46 70 − dB Ibias input bias current − 0.3 −µA ∆V GND DC output offset voltage − 30 200 mV ∆V 4-6 DC output offset voltage between two channels − 4 150 mV MUTE POSITION (AT I MUTE ≥ 300 µA) VO output voltage VI = 600 mV − 0.3 1.0 mV Z2-7 mute input impedance note 7 6.7 9 11.3 k Ω IP total quiescent current RL = ∞ 18 40 70 mA Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 40 55 − dB ∆V GND DC output offset voltage − 40 200 mV ∆V off offset voltage with respect to operating position − 4 150 mV I2 current if pin 2 is connected to pin 5 −− 8.2 mA Mute position; note 5 ±VP supply voltage range 2 − 5.8 V IP total quiescent current RL = ∞ 930 40 mA VO output voltage VI = 600 mV − 0.3 1.0 mV Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 40 55 − dB |
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