Philips Semiconductors

SI2302DS

N-channel enhancement mode field-effect transistor

Product data

Rev. 02 — 20 November 2001

4 of 12

9397 750 09107

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

7.

Thermal characteristics

7.1 Transient thermal impedance

Table 4:

Thermal characteristics

Symbol Parameter

Conditions

Value

Unit

thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4

150

K/W

Fig 4.

Transient thermal impedance from junction to solder point as a function of pulse duration.

03ae91

1

10

102

103

10-4

10-3

10-2

10-1

1

10

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

tp

tp

T

P

t

T