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SI2302DS Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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SI2302DS Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 12 page Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor Product data Rev. 02 — 20 November 2001 4 of 12 9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 7. Thermal characteristics 7.1 Transient thermal impedance Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W Tsp =25 °C Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 03ae91 1 10 102 103 10-4 10-3 10-2 10-1 1 10 tp (s) Zth(j-sp) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t T δ = |
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