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IRF640N Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRF640N Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 11 page  www.irf.com 2 IRF640N/S/L S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 167 251 ns TJ = 25°C, IF = 11A Qrr Reverse Recovery Charge ––– 929 1394 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 18 72 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.15 Ω VGS = 10V, ID = 11A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.8 ––– ––– S VDS = 50V, ID = 11A ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 67 ID = 11A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 10 ––– VDD = 100V tr Rise Time ––– 19 ––– ID = 11A td(off) Turn-Off Delay Time ––– 23 ––– RG = 2.5Ω tf Fall Time ––– 5.5 ––– RD = 9.0Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1160 ––– VGS = 0V Coss Output Capacitance ––– 185 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.0 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB mount) ––– 40 |
Codice articolo simile - IRF640N_04 |
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Descrizione simile - IRF640N_04 |
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