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BA277-01 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BA277-01 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2002 Oct 29 3 Philips Semiconductors Product specification Band-switching diode BA277-01 GRAPHICAL DATA Fig.2 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 10 1 10−1 MGL433 110 VR (V) Cd (pF) 102 Fig.3 Diode forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 2.5 0 0.5 1.5 1.0 2.0 MGL432 10−1 1 rD ( Ω) IF (mA) 10 |
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