PZTA42 datasheet(3/8 Pages) PHILIPS

Il numero della parte	PZTA42

Spiegazioni elettronici	NPN high-voltage transistor

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Produttore elettronici	PHILIPS [NXP Semiconductors]

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3 / 8 page

1999 May 21

3

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistor

PZTA42

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

104

K/W

Rth j-s

thermal resistance from junction to soldering point

23

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 200 V

−

20

nA

IEBO

emitter cut-off current

IC = 0; VBE =6V

−

100

nA

hFE

DC current gain

VCE =10V

IC = 1 mA

25

−

IC =10mA

40

−

IC =30mA

40

−

VCEsat

collector-emitter saturation

voltage

IC = 20 mA; IB =2mA

−

500

mV

VBEsat

base-emitter saturation voltage

IC = 20 mA; IB =2mA

−

900

mV

Cre

feedback capacitance

IC =ic = 0; VCB = 20 V; f = 1 MHz

−

3pF

fT

transition frequency

IC = 10 mA; VCE = 20 V; f = 100 MHz 50

−

MHz

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