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PZTA06 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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PZTA06 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jul 14 2 Philips Semiconductors Product specification NPN general purpose transistor PZTA06 FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • Medium power switching in e.g. telephony and professional communication. DESCRIPTION NPN transistor in a SOT223 plastic package. PNP complement: PZTA56. PINNING PIN DESCRIPTION 1 base 2, 4 collector 3 emitter Fig.1 Simplified outline (SOT223) and symbol. handbook, halfpage 4 12 3 MAM287 Top view 3 2, 4 1 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 80 V IC collector current (DC) − 500 mA Ptot total power dissipation Tamb ≤ 25 °C − 1.2 W hFE DC current gain IC = 100 mA; VCE = 1 V 100 − fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − MHz |
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