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MCZ33970EGR2 Scheda tecnica(PDF) 6 Page - Freescale Semiconductor, Inc |
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MCZ33970EGR2 Scheda tecnica(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 36 page Analog Integrated Circuit Device Data 6 Freescale Semiconductor 33970 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS POWER OUTPUTS (continued) Output Flyback Clamp (10) VFB – VST6 + 0.5 VST6 + 1.0 V Output Current Limit (Output = VST6) ILIM 40 100 170 mA Overtemperature Shutdown (10) OTSD 155 – 180 °C Overtemperature Hysteresis (10) OTHYST 8.0 – 16 °C CONTROL I/O Input Logic High Voltage (11) VIH 2.0 – – V Input Logic Low Voltage (11) VIL – – 0.8 V Input Logic Voltage Hysteresis (10) VIN(HYST) – 100 – mV Input Logic Pull Down Current (SI, SCLK) IDWN 3.0 – 20 µA Input Logic Pull-Up Current (CS, RST) IUP 5.0 – 20 µA SO High-State Output Voltage (IOH = 1.0 mA) VSOH 0.8 VDD – – V SO Low-State Output Voltage (IOL = -1.6 mA) VSOL – 0.2 0.4 V SO Tri-State Leakage Current (CS ≥ 3.5 V) ISOLK -5.0 0 5.0 µA Input Capacitance (12) CIN – 4.0 12 pF SO Tri-State Capacitance (12) CSO – – 20 pF ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT) ADC Gain (10), (13) GADC 100 188 270 Counts/V/ ms Notes 10. This parameter is guaranteed by design; however, it is not production tested. 11. VDD = 5.0 V. 12. Capacitance not measured. This parameter is guaranteed by design; however, it is not production tested. 13. Reference Figure 8, RTZ Accumulator (Typical) Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 4.75 V < VDD < 5.25 V, -40°C < TA < 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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