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NE350184C-T1 Datasheet(Scheda tecnica) 1 Page - California Eastern Labs

Numero della parte NE350184C-T1
Dettagli  HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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Produttore  CEL [California Eastern Labs]
Homepage  http://www.cel.com
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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE350184C-T1
NE350184C-T1-A
1 kpcs/reel
A
NE350184C-T1A
NE350184C-T1A-A
84C (Pb-Free)
5 kpcs/reel
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
−3
V
Drain Current
ID
IDSS
mA
Gate Current
IG
80
µA
Total Power Dissipation
Ptot
Note
165
mW
Channel Temperature
Tch
+150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)




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