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NE3509M04_06 Datasheet(Scheda tecnica) 1 Page - California Eastern Labs

Numero della parte NE3509M04_06
Dettagli  L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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Produttore  CEL [California Eastern Labs]
Homepage  http://www.cel.com
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Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3509M04
NE3509M04-A
50 pcs (Non reel)
V80
NE3509M04-T2
NE3509M04-T2-A
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
200
µA
Total Power Dissipation
Ptot
Note
150
mW
Channel Temperature
Tch
+150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Document No. PG10608EJ01V0DS (1st edition)
Date Published April 2006 NS CP(K)




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